Title :
Reliability of a GaAs MMIC process based on 0.5 /spl mu/m Au/Pd/Ti gate MESFETs
Author :
Bensoussan, A. ; Coval, P. ; Roesch, W.J. ; Rubalcava, T.
Author_Institution :
Alcatel Espace, Toulouse, France
Abstract :
In a cooperative Supplier/Customer program, qualification testing was completed on GaAs Technology Characterization Vehicles (TCVs), Standard Evaluation Circuits (SECs) and MMICs for application in space. Degradation was measured in multiple 4,000 hour tests at 200/spl deg/C and 225/spl deg/C. Comparisons between circuits, TCVs, and historical database were favourable and a new diffusion model for MESFET wearout was developed.<>
Keywords :
III-V semiconductors; MMIC; circuit reliability; field effect integrated circuits; gallium arsenide; integrated circuit testing; 0.5 micron; 200 to 225 degC; 4000 h; Au-Pd-Ti; Au/Pd/Ti gate MESFETs; GaAs; MESFET wearout; MMIC process; Standard Evaluation Circuits; Technology Characterization Vehicles; diffusion model; historical database; qualification testing; reliability; space applications; Circuit testing; Databases; Degradation; Gallium arsenide; Gold; MESFET circuits; MMICs; Qualifications; Space technology; Space vehicles;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307802
