A new mechanism of pipeline defect formation in CMOS devices

Author

Belgal, H. ; Yuen, G. ; Grohs, J. ; Rozler, L. ; Gee, H. ; Broydo, S. ; Wegener, H.A.R. ; Owen, W. ; Drori, J.

Author_Institution

Xicor Inc., Milpitas, CA, USA

fYear

1994

fDate

11-14 April 1994

Firstpage

399

Lastpage

404

Abstract

Pipeline defects, also known as "diffusion pipes", were widely reported in bipolar devices. They were recently reported to occur in complementary metal-oxide-semiconductor (CMOS) devices. We report a new mechanism of the formation of pipeline defects in CMOS devices. Moderate dose (2E13-2E14 cm/sup -2/) arsenic implants, under certain process conditions, can result in pipeline defects causing leakage between implanted regions. Enhanced diffusion of phosphorus along oxidation induced defects formed as a result of implant damage is proposed as a mechanism for the formation of pipeline defects. A low temperature furnace recrystallization step in inert ambient prior to subsequent high temperature processing was found to be critical to eliminating this defect mechanism.<>

Keywords

CMOS integrated circuits; arsenic; integrated circuit technology; ion implantation; phosphorus; self-diffusion in solids; CMOS devices; P diffusion enhancement; Si:As; Si:P; diffusion pipes; high temperature processing; implanted regions; leakage; low temperature furnace recrystallization; moderate dose As implants; oxidation induced defects; pipeline defect formation; CMOS technology; Crystallization; Etching; Implants; Integrated circuit yield; Oxidation; Pipelines; Silicon; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307807

Filename

307807