DocumentCode
1956292
Title
A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides
Author
Ren, Shen ; Rong, Yiwen ; Claussen, Stephanie ; Schaevitz, Rebecca ; Kamins, Theodore I. ; Harris, James S. ; Miller, David A B
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
11
Lastpage
13
Abstract
We present a Ge/SiGe quantum well QCSE waveguide modulator that is monolithically integrated with SOI waveguides. The integrated device shows 3.2 dB contrast ratio with 1 V swing at 7.0 Gbps.
Keywords
Ge-Si alloys; integrated optics; optical modulation; optical waveguides; quantum confined Stark effect; quantum well devices; silicon-on-insulator; Ge-SiGe; SOI waveguides; quantum well QCSE waveguide modulator; voltage 1 V; Optical device fabrication; Optical modulation; Optical waveguides; Silicon; Silicon germanium; Temperature measurement; germanium quantum well; optical interconnects; optical waveguide modulator; quantum-confined Stark Effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053699
Filename
6053699
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