Title :
10 Gbit/s silicon modulator based on interdigitated PN junctions
Author :
Ziebell, M. ; Marris-Morini, D. ; Rasigade, G. ; Crozat, P. ; Fédéli, J-M ; Grosse, P. ; Cassan, E. ; Vivien, L.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
Silicon modulator based on interdigitated PN junctions integrated in a ring resonator is experimentally demonstrated, showing a 4 dB Extinction Ratio at 10 Gbit/s.
Keywords :
electro-optical modulation; optical resonators; p-n junctions; silicon; bit rate 10 Gbit/s; extinction ratio; interdigitated PN junctions; ring resonator; silicon modulator; High speed optical techniques; Optical device fabrication; Optical modulation; Optical ring resonators; Optical waveguides; Silicon; Silicon; high frequency; modulation; ring resonator;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053701
