DocumentCode :
1956417
Title :
FAMAS: FAult Modeling via Adaptive Simulation
Author :
Jin, Haiming ; Iyer, Ravishankar K. ; Hsueh, M.C. ; Covington, Maiko
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fYear :
1997
fDate :
4-7 Jan 1997
Firstpage :
413
Lastpage :
417
Abstract :
This paper describes FAMAS-FAult Modeling via Adaptive Simulation: a software tool that models transient faults and evaluates their impact on latch error probabilities through fault injection. The tool integrates DESSIS (a device-physics-level simulator) and SPICE using an adaptive approach. The behavior of electron hole pairs is captured for semiconductor devices under ionic radiation. Changes in bias voltage due to current surge are taken into account in an iterative fashion during the process of fault model construction. Results show that in general, the adaptively simulated fault model results in higher latch error probabilities than the Messenger model under the same process and electrical conditions
Keywords :
SPICE; fault diagnosis; integrated circuit modelling; transient analysis; DESSIS; FAMAS; SPICE; adaptive simulation; current surge; device-physics-level simulator; electron hole pairs; fault injection; ionic radiation; latch error probability; semiconductor device; software tool; transient fault modeling; Circuit faults; Circuit simulation; Computational modeling; Digital systems; Error probability; Latches; SPICE; Semiconductor device modeling; Surges; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 1997. Proceedings., Tenth International Conference on
Conference_Location :
Hyderabad
ISSN :
1063-9667
Print_ISBN :
0-8186-7755-4
Type :
conf
DOI :
10.1109/ICVD.1997.568168
Filename :
568168
Link To Document :
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