Characterization of wafer charging mechanisms and oxide survival prediction methodology

Unipolar, EEPROM-based peak potential sensors and current sensors have been used to characterize the J-V relationship of charging transients which devices normally experience during the course of ion implantation. The results indicate that the charging sources may appear to behave like current-sources or voltage-sources, depending on the impedance of the load. This behavior may be understood in terms of plasma concepts. The ability to empirically characterize the J-V characteristics of charging sources using the CHARM-2 monitor wafers opens the way for prediction of failure rates of oxides subjected to specific processes, if the oxide Q/sub bd/ distributions are known.<>