Title :
Mechanism for the n-field device failure in double level metal CMOS device
Author :
Kim, Si Bum ; Paik, Jong Sung ; Ko, Chul Gi
Author_Institution :
Semicond. Res. & Dev. Lab., Hyundai Electron., Kyoungki-Do, South Korea
Abstract :
A new mechanism for the n-field device failure in double level metal CMOS integrated circuits using SOG (spin-on glass) films for intermetal oxide planarization is suggested. From the analysis of I-V curve for field devices, junction leakage current and C-V curves of the field oxide capacitor, it is deduced that the degradation in the n-channel isolation characteristics between n/sup +/ and n/sup +/ areas is closely related to the formation of a minority carrier generation center in the p-type silicon substrate, which can provide minority carriers of short generation life time, i.e. donors, rather than by positive charge formation in the field oxide.<>
Keywords :
CMOS integrated circuits; capacitance; circuit reliability; failure analysis; insulated gate field effect transistors; leakage currents; minority carriers; C-V curves; I-V curve; SOG films; double level metal CMOS device; double level metal CMOS integrated circuits; field devices; field oxide; field oxide capacitor; intermetal oxide planarization; junction leakage current; minority carrier generation center; minority carriers; n-channel isolation characteristics; n-field device failure; p-type silicon substrate; positive charge formation; short generation life time; spin-on glass films; CMOS integrated circuits; Capacitance-voltage characteristics; Capacitors; Dielectric substrates; Glass; Hydrogen; Passivation; Planarization; Semiconductor films; Silicon;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307819
