Title :
Interface diffusion during electromigration in Al lines
Author :
Augur, Roderick A.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Significant diffusion has been observed at the interface between Al and Al-oxide, during electromigration under conditions where grain boundary diffusion is traditionally thought to dominate. Voids form by localized Al thinning. These voids closely resemble those previously attributed to grain boundary diffusion. This has been studied by SEM, electron back-scattered (Kikuchi) diffraction and atomic force microscopy.<>
Keywords :
aluminium; atomic force microscopy; circuit reliability; electromigration; metal-insulator boundaries; metallic thin films; metallisation; scanning electron microscope examination of materials; surface diffusion; voids (solid); Al lines; Al-AlO-Si; IC interconnects; SEM; atomic force microscopy; electromigration; electron back-scattered diffraction; interface diffusion; localized Al thinning; voids; Atomic force microscopy; Diffraction; Electromigration; Electron microscopy; Grain boundaries; Grain size; Scanning electron microscopy; Sputtering; Stress; Testing;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307825
