DocumentCode
1956574
Title
Interface diffusion during electromigration in Al lines
Author
Augur, Roderick A.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1994
fDate
11-14 April 1994
Firstpage
266
Lastpage
273
Abstract
Significant diffusion has been observed at the interface between Al and Al-oxide, during electromigration under conditions where grain boundary diffusion is traditionally thought to dominate. Voids form by localized Al thinning. These voids closely resemble those previously attributed to grain boundary diffusion. This has been studied by SEM, electron back-scattered (Kikuchi) diffraction and atomic force microscopy.<>
Keywords
aluminium; atomic force microscopy; circuit reliability; electromigration; metal-insulator boundaries; metallic thin films; metallisation; scanning electron microscope examination of materials; surface diffusion; voids (solid); Al lines; Al-AlO-Si; IC interconnects; SEM; atomic force microscopy; electromigration; electron back-scattered diffraction; interface diffusion; localized Al thinning; voids; Atomic force microscopy; Diffraction; Electromigration; Electron microscopy; Grain boundaries; Grain size; Scanning electron microscopy; Sputtering; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307825
Filename
307825
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