• DocumentCode
    1956580
  • Title

    Change of the failure mode of layered aluminum conductors by modification of overlying dielectric

  • Author

    Pramanik, Dipankar ; Chowdhury, Vijay ; Jain, Vivek

  • Author_Institution
    VLSI Technol. Inc., San Jose, CA, USA
  • fYear
    1994
  • fDate
    11-14 April 1994
  • Firstpage
    261
  • Lastpage
    265
  • Abstract
    The failure mode of multilayered Al interconnects changes from shorts due to extrusions to failures due to resistance increase when the overlying dielectric is modified. A thick rigid dielectric favors failures due to extrusions whereas a more flexible dielectric favors resistance increase. The dielectric effectively changes the mechanical behavior of the interconnect without changing the overall kinetics of mass accumulation and depletion and suggests a model where the final mode of failure is determined by the response of the interconnect to mechanical stresses.<>
  • Keywords
    aluminium; circuit reliability; dielectric thin films; electromigration; failure analysis; integrated circuit technology; internal stresses; metallisation; Al; extrusions; failure mode; flexible dielectric; layered Al conductors; mechanical behavior; mechanical stresses; model; multilayered Al interconnects; overlying dielectric modification; resistance increase; thick rigid dielectric; Aluminum; Circuit testing; Conductors; Dielectric thin films; Electromigration; Etching; Integrated circuit interconnections; Metallization; Monitoring; Nonhomogeneous media;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    0-7803-1357-7
  • Type

    conf

  • DOI
    10.1109/RELPHY.1994.307826
  • Filename
    307826