DocumentCode
1956580
Title
Change of the failure mode of layered aluminum conductors by modification of overlying dielectric
Author
Pramanik, Dipankar ; Chowdhury, Vijay ; Jain, Vivek
Author_Institution
VLSI Technol. Inc., San Jose, CA, USA
fYear
1994
fDate
11-14 April 1994
Firstpage
261
Lastpage
265
Abstract
The failure mode of multilayered Al interconnects changes from shorts due to extrusions to failures due to resistance increase when the overlying dielectric is modified. A thick rigid dielectric favors failures due to extrusions whereas a more flexible dielectric favors resistance increase. The dielectric effectively changes the mechanical behavior of the interconnect without changing the overall kinetics of mass accumulation and depletion and suggests a model where the final mode of failure is determined by the response of the interconnect to mechanical stresses.<>
Keywords
aluminium; circuit reliability; dielectric thin films; electromigration; failure analysis; integrated circuit technology; internal stresses; metallisation; Al; extrusions; failure mode; flexible dielectric; layered Al conductors; mechanical behavior; mechanical stresses; model; multilayered Al interconnects; overlying dielectric modification; resistance increase; thick rigid dielectric; Aluminum; Circuit testing; Conductors; Dielectric thin films; Electromigration; Etching; Integrated circuit interconnections; Metallization; Monitoring; Nonhomogeneous media;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307826
Filename
307826
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