Title :
Change of the failure mode of layered aluminum conductors by modification of overlying dielectric
Author :
Pramanik, Dipankar ; Chowdhury, Vijay ; Jain, Vivek
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
The failure mode of multilayered Al interconnects changes from shorts due to extrusions to failures due to resistance increase when the overlying dielectric is modified. A thick rigid dielectric favors failures due to extrusions whereas a more flexible dielectric favors resistance increase. The dielectric effectively changes the mechanical behavior of the interconnect without changing the overall kinetics of mass accumulation and depletion and suggests a model where the final mode of failure is determined by the response of the interconnect to mechanical stresses.<>
Keywords :
aluminium; circuit reliability; dielectric thin films; electromigration; failure analysis; integrated circuit technology; internal stresses; metallisation; Al; extrusions; failure mode; flexible dielectric; layered Al conductors; mechanical behavior; mechanical stresses; model; multilayered Al interconnects; overlying dielectric modification; resistance increase; thick rigid dielectric; Aluminum; Circuit testing; Conductors; Dielectric thin films; Electromigration; Etching; Integrated circuit interconnections; Metallization; Monitoring; Nonhomogeneous media;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307826