DocumentCode :
1956585
Title :
Very low energy implanted Bragg gratings in SOI for wafer scale testing applications
Author :
Loiacono, Renzo ; Topley, Rob ; Nakyobe, Agnes ; Mashanovich, Goran ; Gwilliam, Russel ; Lulli, Giorgio ; Feldesh, Ran ; Jones, Richard ; Reed, Graham
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
51
Lastpage :
53
Abstract :
We present Bragg gratings with an effective index change introduced by implanting germanium at only 15KeV. An extinction ratio of 35dB at 1350nm is demonstrated for device lengths of 600μm, furthermore laser annealing is demonstrated.
Keywords :
Bragg gratings; elemental semiconductors; germanium; laser beam annealing; silicon; silicon-on-insulator; Bragg gratings; Ge; SOI; Si; electron volt energy 15 keV; laser annealing; silicon-on-insulator; wafer scale testing; wavelength 1350 nm; wavelength 600 mum; Gratings; Optical device fabrication; Optical losses; Optical waveguides; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053712
Filename :
6053712
Link To Document :
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