DocumentCode
1956585
Title
Very low energy implanted Bragg gratings in SOI for wafer scale testing applications
Author
Loiacono, Renzo ; Topley, Rob ; Nakyobe, Agnes ; Mashanovich, Goran ; Gwilliam, Russel ; Lulli, Giorgio ; Feldesh, Ran ; Jones, Richard ; Reed, Graham
Author_Institution
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
51
Lastpage
53
Abstract
We present Bragg gratings with an effective index change introduced by implanting germanium at only 15KeV. An extinction ratio of 35dB at 1350nm is demonstrated for device lengths of 600μm, furthermore laser annealing is demonstrated.
Keywords
Bragg gratings; elemental semiconductors; germanium; laser beam annealing; silicon; silicon-on-insulator; Bragg gratings; Ge; SOI; Si; electron volt energy 15 keV; laser annealing; silicon-on-insulator; wafer scale testing; wavelength 1350 nm; wavelength 600 mum; Gratings; Optical device fabrication; Optical losses; Optical waveguides; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053712
Filename
6053712
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