Title :
Improved performance of single-mode lasers by using native-oxide lateral-confinement layers
Author :
Heerlein, J. ; Grabherr, M. ; Jager, R. ; Unger, P.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
We report on results of wet oxidized narrow stripe GaAs QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 3-11 /spl mu/m achieved single mode output powers of up to 240 mW in continuous wave operation at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; laser modes; laser transitions; oxidation; quantum well lasers; 3 to 11 mum; 850 nm; GaAs; active width; continuous wave operation; emission wavelength; longitudinal mode; native-oxide lateral-confinement layers; room temperature; single lateral mode; single mode output powers; single-mode lasers; wet oxidized narrow stripe GaAs QW laser diodes; Diode lasers; Gallium arsenide; Laser modes; Optical waveguides; Oxidation; Power generation; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619197
