Improved performance of single-mode lasers by using native-oxide lateral-confinement layers

Author

Heerlein, J. ; Grabherr, M. ; Jager, R. ; Unger, P.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

11

Lastpage

12

Abstract

We report on results of wet oxidized narrow stripe GaAs QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 3-11 /spl mu/m achieved single mode output powers of up to 240 mW in continuous wave operation at room temperature.

Keywords

III-V semiconductors; gallium arsenide; laser modes; laser transitions; oxidation; quantum well lasers; 3 to 11 mum; 850 nm; GaAs; active width; continuous wave operation; emission wavelength; longitudinal mode; native-oxide lateral-confinement layers; room temperature; single lateral mode; single mode output powers; single-mode lasers; wet oxidized narrow stripe GaAs QW laser diodes; Diode lasers; Gallium arsenide; Laser modes; Optical waveguides; Oxidation; Power generation; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619197

Filename

619197