Title :
Wide line, low current electromigration in Al-Cu metallization with refractory underlayer
Author :
Baerg, Bill ; Crandall, Rob ; Wu, Ken
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
A one-year electromigration experiment was performed on an 8.9 /spl mu/m wide serpentine metal structure, at stress current densities from 0.3 to 1.3 MA/cm/sup 2/. Resistance decreases were observed and explained, and used to estimate a drift velocity which is linearly proportional to the difference between the stress current and the current threshold. The activation energy was found to be approximately 1.1 eV.<>
Keywords :
aluminium alloys; circuit reliability; copper alloys; current density; electromigration; failure analysis; integrated circuit technology; metallisation; 8.9 micron; Al-Cu metallization; AlCu; activation energy; drift velocity; low current electromigration; refractory underlayer; serpentine metal structure; wide line metal; Bonding; Circuit testing; Current density; Electromigration; Electrons; Metallization; Passivation; Stress; System testing; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307837
