Title :
154µm Er doped light emitting devices: Role of silicon content
Author :
Tengattini, A. ; Marconi, A. ; Anopchenko, A. ; Prtljaga, N. ; Pavesi, L. ; Ramírez, J.M. ; Jambois, O. ; Berencén, Y. ; Navarro-Urrios, D. ; Garrido, B. ; Milesi, F. ; Colonna, J. -P ; Fedeli, J. -M
Author_Institution :
Dept. of Phys., Univ. of Trento, Povo, Italy
Abstract :
Thin erbium implanted silicon rich oxides films have been used as active layer in light emitting devices. Electroluminescence has been observed and analyses as a function of the silicon content.
Keywords :
electroluminescence; erbium; light emitting devices; optical films; silicon compounds; SiO2:Er; doped light emitting devices; electroluminescence; erbium implanted silicon rich oxide films; size 1.54 mum; Electroluminescence; Erbium; Ions; Light emitting diodes; Nanocrystals; Nonhomogeneous media; Silicon; Erbium Sensitizer; Power Efficiency; Silicon Nanocrystals;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053721
