Title :
Ge quantum well resonator modulators
Author :
Edwards, Elizabeth H. ; Audet, Ross M. ; Fei, Edward ; Shambat, Gary ; Schaevitz, Rebecca K. ; Rong, Yiwen ; Claussen, Stephanie A. ; Kamins, Theodore I. ; Vuckovic, Jelena ; Harris, James S. ; Miller, David A B
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. We demonstrate surface-normal asymmetric Fabry-Perot and microdisk resonator modulators employing Ge quantum wells grown on silicon.
Keywords :
Fabry-Perot resonators; Ge-Si alloys; electro-optical modulation; electroabsorption; integrated optics; semiconductor quantum wells; CMOS-compatible integrated optical modulators; Ge quantum well resonator modulators; Ge-SiGe; electroabsorption modulation; microdisk resonator modulators; surface-normal asymmetric Fabry-Perot resonators; Absorption; Modulation; Optical resonators; Optical surface waves; Silicon; Silicon germanium; Surface treatment; SiGe; electroabsorption; integrated optoelectronics; interconnects; modulator;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053722
