Title :
Improvement in the electromigration lifetime using hyper-textured aluminum formed on amorphous tantalum-aluminum underlayer
Author :
Toyoda, H. ; Kawanoue, T. ; Hasunuma, M. ; Kaneko, H. ; Miyauchi, Makoto
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A new fabrication technique for hyper-textured aluminum (Al) films has been developed by using an amorphous tantalum-aluminum (Ta-Al) underlayer. The full width at half maximum (FWHM) value of the (111) rocking curve for Al film has been attained to be less than 1 degree. It has been clarified that the empirical relation between the electromigration (EM) lifetime of an Al interconnection /spl tau/ and the FWHM value /spl omega/ is described as /spl tausup /spl prop/spl omegasup -2/. This result has confirmed that a hyper-texture is a promising approach to withstand higher current densities required in future ULSIs.<>
Keywords :
VLSI; aluminium; circuit reliability; discontinuous metallic thin films; electromigration; integrated circuit technology; metallisation; sputter deposition; sputtered coatings; surface texture; (111) rocking curve; Al interconnection; Al-TaAl; ULSI; amorphous Ta-Al alloy underlayer; electromigration lifetime; fabrication technique; hyper-textured Al films; Aluminum; Amorphous materials; Current density; Electromigration; Fabrication; Lattices; Research and development; Substrates; Tin; Ultra large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307839
