Improvement in the electromigration lifetime using hyper-textured aluminum formed on amorphous tantalum-aluminum underlayer

Author

Toyoda, H. ; Kawanoue, T. ; Hasunuma, M. ; Kaneko, H. ; Miyauchi, Makoto

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1994

fDate

11-14 April 1994

Firstpage

178

Lastpage

184

Abstract

A new fabrication technique for hyper-textured aluminum (Al) films has been developed by using an amorphous tantalum-aluminum (Ta-Al) underlayer. The full width at half maximum (FWHM) value of the (111) rocking curve for Al film has been attained to be less than 1 degree. It has been clarified that the empirical relation between the electromigration (EM) lifetime of an Al interconnection /spl tau/ and the FWHM value /spl omega/ is described as /spl tausup /spl prop/spl omegasup -2/. This result has confirmed that a hyper-texture is a promising approach to withstand higher current densities required in future ULSIs.<>

Keywords

VLSI; aluminium; circuit reliability; discontinuous metallic thin films; electromigration; integrated circuit technology; metallisation; sputter deposition; sputtered coatings; surface texture; (111) rocking curve; Al interconnection; Al-TaAl; ULSI; amorphous Ta-Al alloy underlayer; electromigration lifetime; fabrication technique; hyper-textured Al films; Aluminum; Amorphous materials; Current density; Electromigration; Fabrication; Lattices; Research and development; Substrates; Tin; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307839

Filename

307839