Title :
Spin polarized photoemission from strained Ge epilayers grown by low-energy plasma-enhanced CVD (LEPECVD)
Author :
Cecchi, Stefano ; Bottegoni, Federico ; Ferrari, Alberto ; Chrastina, Daniel ; Isella, Giovanni ; Ciccacci, Franco
Author_Institution :
Dipt. di Fis., Politec. di Milano, Milan, Italy
Abstract :
We present spin polarized photoemission experiments (SPPE) on strained Ge/SiGe/Si(001) layers. SPPE indicates that compressive bi-axial strain effectively lifts the HH-LH degeneracy raising the polarization of injected electrons above the P=50% limit of bulk material.
Keywords :
elemental semiconductors; germanium; internal stresses; photoemission; plasma CVD; semiconductor epitaxial layers; semiconductor growth; spin polarised transport; Ge-SiGe-Si; LEPECVD; SiGe-Si; bulk material; compressive biaxial strain; electron injection; low-energy plasma-enhanced CVD; spin polarized photoemission; strained epilayer growth; Electron optics; Films; Optical polarization; Photoelectricity; Photonics; Silicon; Strain; LEPECVD; Strained Ge; spin polarized photoemission;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053723
