Title :
High field emission related thin oxide wearout and breakdown
Author :
Dumin, D.J. ; Mopuri, S. ; Vanchinathan, S. ; Scott, R.S. ; Subramoniam, R. ; Lewis, T.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
Abstract :
A model describing high voltage induced thin oxide wearout and breakdown in terms of traps generated inside of the oxide by high field emission has been developed. This model has been shown to be able to describe much of the thickness, field, polarity, time and temperature dependences observed during thin oxide wearout and breakdown.<>
Keywords :
CMOS integrated circuits; circuit reliability; dielectric thin films; electric breakdown of solids; electron traps; hole traps; interface electron states; semiconductor process modelling; CMOS wafers; EEPROM wafers; field dependence; film thickness dependence; high field emission; polarity dependence; temperature dependence; thin oxide breakdown; thin oxide wearout; time dependence; trap generation; Anodes; Breakdown voltage; Cathodes; Degradation; Electric breakdown; Electron traps; Impact ionization; Instruments; Semiconductor device reliability; Silicon;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307844
