Title :
Modeling ultrathin dielectric breakdown on correlation of charge trap-generation to charge-to-breakdown
Author :
Apte, Pushkar P. ; Saraswat, Krishna C.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
Degradation in ultrathin dielectric films due to high-field stress is a critical concern in ULSI technology. We investigate here the link between trap-generation and breakdown as a function of five technologically relevant parameters, namely stress-current density (10/sup -3/-10/sup 1/ A/cm/sup 2/), oxide thickness (70-250 A), stress temperature (25-100 /spl deg/C), charge-injection polarity (gate vs substrate), and nitridation of pure oxide (using N/sub 2/O). For all five parameters, a strong correlation has been observed between oxide degradation and the generation of new traps by physical bondbreaking.<>
Keywords :
VLSI; circuit reliability; dielectric thin films; electric breakdown of solids; electron traps; metal-insulator-semiconductor devices; nitridation; 25 to 100 degC; 70 to 250 angstrom; ULSI technology; charge trap-generation; charge-injection polarity; charge-to-breakdown; high-field stress; nitridation; oxide thickness; physical bondbreaking; stress temperature; stress-current density; ultrathin dielectric breakdown; ultrathin dielectric films; Degradation; Design for quality; Dielectric breakdown; Dielectric measurements; Dielectric substrates; Electric breakdown; Electron traps; Stress; Temperature; Testing;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307845
