DocumentCode :
1956963
Title :
1.54 µm electroluminescence in SiC:Er2O3 films
Author :
Qin, G.G. ; Yin, Y. ; Ran, G.Z.
Author_Institution :
State Key Lab. for Mesoscopic Phys., Peking Univ., Beijing, China
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
101
Lastpage :
103
Abstract :
SiC:Er2O3 films with different ratios of SiC to Er2O3 have been deposited on p-type Si substrates by the magnetron co-sputtering technique fully compatible with current Si processing technologies. 1.54 μm electroluminescence from the structure of indium tin oxide (ITO)/n+-Si/SiC:Er2O3/p-Si with suitable ratios of SiC to Er2O3 was measured under forward biases.
Keywords :
electroluminescence; elemental semiconductors; erbium compounds; indium compounds; photoluminescence; semiconductor thin films; silicon; silicon compounds; sputter deposition; wide band gap semiconductors; ITO-Si-SiC-Si; Si; Si processing technology; SiC:Er2O3; electroluminescence; magnetron cosputtering; p-type Si substrates; photoluminescence; thin films; wavelength 1.54 mum; Educational institutions; Indium tin oxide; Integrated optics; Performance evaluation; Silicon carbide; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053729
Filename :
6053729
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1956963
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