Title :
Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/
Author :
Suehle, John S. ; Chaparala, Prasad ; Messick, Cleston ; Miller, William M. ; Boyko, Kenneth C.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Time-Dependent Dielectric Breakdown (TDDB) data are presented for 15- and 22.5-nm oxides collected over a wide range of electric fields and temperatures. The results indicate that it is necessary to obtain data over this range to distinguish between the two field acceleration models and to quantify the electric field and temperature dependencies of the thermal activation energy and the field acceleration factor, respectively. We also report on the TDDB characteristics of thin SiO/sub 2/ films at temperatures as high as 400/spl deg/C and demonstrate the use of these temperatures to accelerate TDDB.<>
Keywords :
dielectric thin films; electric breakdown of solids; life testing; semiconductor device testing; silicon compounds; 15 nm; 22.5 nm; 400 degC; SiO/sub 2/; TDDB characteristics; electric field; field acceleration factor; field acceleration models; intrinsic thin SiO/sub 2/; temperature dependencies; thermal activation energy; time-dependent dielectric breakdown; Acceleration; Breakdown voltage; Capacitors; Dielectric breakdown; Life estimation; Probes; Stress; Temperature dependence; Temperature distribution; Testing;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307847
