Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/

Author

Suehle, John S. ; Chaparala, Prasad ; Messick, Cleston ; Miller, William M. ; Boyko, Kenneth C.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1994

fDate

11-14 April 1994

Firstpage

120

Lastpage

125

Abstract

Time-Dependent Dielectric Breakdown (TDDB) data are presented for 15- and 22.5-nm oxides collected over a wide range of electric fields and temperatures. The results indicate that it is necessary to obtain data over this range to distinguish between the two field acceleration models and to quantify the electric field and temperature dependencies of the thermal activation energy and the field acceleration factor, respectively. We also report on the TDDB characteristics of thin SiO/sub 2/ films at temperatures as high as 400/spl deg/C and demonstrate the use of these temperatures to accelerate TDDB.<>

Keywords

dielectric thin films; electric breakdown of solids; life testing; semiconductor device testing; silicon compounds; 15 nm; 22.5 nm; 400 degC; SiO/sub 2/; TDDB characteristics; electric field; field acceleration factor; field acceleration models; intrinsic thin SiO/sub 2/; temperature dependencies; thermal activation energy; time-dependent dielectric breakdown; Acceleration; Breakdown voltage; Capacitors; Dielectric breakdown; Life estimation; Probes; Stress; Temperature dependence; Temperature distribution; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307847

Filename

307847