DocumentCode
1957056
Title
Analyzing the frequency response of micromachined capacitive inertial devices by the third harmonic detection
Author
Xiao, Dingbang ; Xie, Liqiang ; Hou, Zhanqiang ; Wu, Xuezhong ; Li, Shengyi
Author_Institution
Lab. of Microsyst., Nat. Univ. of Defense Technol., Changsha
fYear
2009
fDate
5-8 Jan. 2009
Firstpage
339
Lastpage
342
Abstract
It´s a challenge to figure out the frequency response of a capacitive MEMS device due to the large coupling noises introduced by the parasitic capacitors. We present a new method to measure the frequency response based on the third harmonic detection. Different from previous methods, the frequency of the measured signal in our method is triple as that of the exciting voltage, so there is no coupling noise from the exciting voltage through the parasitic capacitors, and a higher SNR is achieved. In this paper, the principle of this method is introduced, and the configuration of the measurement system is presented. The simulation results as well as the experimental results show that this new method works very well.
Keywords
harmonic generation; micromachining; micromechanical devices; capacitive MEMS device; exciting voltage; frequency response; higher SNR; micromachined capacitive inertial devices; parasitic capacitors; third harmonic detection; Amplifiers; Capacitors; Circuits; Electrostatic measurements; Force measurement; Frequency measurement; Frequency response; Harmonic analysis; Signal to noise ratio; Voltage; Electrostatic force; Frequency response; Harmonic detection;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4244-4629-2
Electronic_ISBN
978-1-4244-4630-8
Type
conf
DOI
10.1109/NEMS.2009.5068591
Filename
5068591
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