Title :
Hot-carrier-induced degradation in ultra-thin, fully-depleted, deep-submicron nMOS and pMOS SOI transistors
Author :
Tsuchiya, Toshiaki ; Ohno, Terukazu ; Kado, Yuichi ; Kai, Junko
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
The hot-carrier-injected oxide region is systematically investigated for fully depleted surface-channel (SC) nMOS and SC- and buried-channel pMOSFETs fabricated on an ultra-thin (50 nm)-film SIMOX wafer. NMOSFET degradation is shown to be caused mainly by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the back oxide and the front oxide. It is shown experimentally for the first-time that these fully depleted devices with effective channel lengths of 0.1-0.2 /spl mu/m have fairly high hot-carrier immunity, even for single-drain structures.<>
Keywords :
SIMOX; hot carriers; insulated gate field effect transistors; reliability; semiconductor device testing; 0.1 to 0.2 mum; 50 nm; NMOSFET degradation; SIMOX wafer; buried-channel; deep-submicron; effective channel lengths; fully depleted devices; fully-depleted; high hot-carrier immunity; hot-carrier injection; hot-carrier-induced degradation; hot-carrier-injected oxide region; nMOS SOI transistors; nMOSFETs; pMOS SOI transistors; pMOSFETs; single-drain structures; surface-channel; ultra-thin; Degradation; Hot carrier effects; Hot carrier injection; Hot carriers; MOS devices; MOSFETs; Stress measurement; Threshold voltage; Time measurement; Transistors;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307856
