Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques

Author

Huang, Di-hui ; King, Everett E. ; Palkuti, L.J.

Author_Institution

Adv. Res. & Appl. Corp. (ARACO), Sunnyvale, CA, USA

fYear

1994

fDate

11-14 April 1994

Firstpage

34

Lastpage

41

Abstract

A method to evaluate the sensitivity of p-channel MOSFETs to hot-carrier-induced damage by using the total injected charge as the degradation monitor is presented. The advantage of the method is that lifetimes for all devices made with a particular process correlate to the same straight line with respect to the total injected charge with the slope about 1.8. It then becomes easy to compare the hot-carrier sensitivity of p-channel devices made by different process technologies.<>

Keywords

carrier lifetime; hot carriers; insulated gate field effect transistors; semiconductor device testing; carrier lifetimes; degradation monitor; hot-carrier sensitivity; hot-carrier-induced damage; hot-carrier-induced degradation; p-channel MOSFETs; p-channel devices; process technologies; total injected charge techniques; Acceleration; Degradation; Electron traps; Hot carriers; MOSFETs; Monitoring; Stress; Tellurium; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307860

Filename

307860