Analysis of externally imposed mechanical stress effects on the hot-carrier-induced degradation of MOSFET´s

Author

Degraeve, R. ; Wolf, I. De ; Groeseneken, G. ; Maes, H.E.

Author_Institution

IMEC, Leuven, Belgium

fYear

1994

fDate

11-14 April 1994

Firstpage

29

Lastpage

33

Abstract

We have studied the influence of externally imposed mechanical stress on the hot-carrier-induced degradation of MOSFET´s. For nMOSFET´s, tensile (compressive) stress increases (decreases) degradation. This effect can be ascribed to the piezoresistance effect which alters hot carrier generation. We have demonstrated that, in contradiction to earlier reports in the literature and for the considered mechanical stress values, externally imposed mechanical stress has no influence on carrier trapping, nor on interface trap creation.<>

Keywords

electron traps; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; piezoresistance; compressive stress; externally imposed mechanical stress effects; hot-carrier-induced degradation; n-channel MOSFET; nMOSFETs; piezoresistance effect; tensile stress; Compressive stress; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFET circuits; Strips; Substrate hot electron injection; Tensile stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307861

Filename

307861