Study on the electrical contact property at the interface of the NiCr/TiW films

In order to study the electrical contact property at metal film interfaces, a NiCr/TiW film of about 40 nm/30 nm were deposited on the silicon substrate by magnetron sputtering. The mechanical and electrical properties of the film were studied by nano-ECR system. Different loads from 1500 muN to 3500 muN with voltage of 5 V were applied to the sample. Changing of the electrical property in NiCr/TiW and its interface was tested. The result showed that the average roughness of the sample was 3.8 nm in the area of 10 times10 mum². when the conductive diamond tip contacted the surface of NiCr film. there was a sudden increasing of the current; for further indent, the NiCr/TiW film behaved piezoresistive effect distinctly with the increasing of indenting velocity duo to the lattice distortion of the metal film during the indent and which cumbered the movement of free electron. The compound material of Ti-silicide formed during sputter decreased the contact resistivity between the metal and semiconductor. The mechanical and electrical properties at the interface of metal film and semiconductor behaved evidently under the loading velocity of 350 muN/s.