Experimental investigation of MOSFETs and coplanar waveguides on p-type high resistivity SIMOX substrate for radio-frequency applications

Summary form only given. The use of SOI substrates for the integration of high frequency circuits is currently reported to be very promising, since passive and active devices elaborated on such materials present rather good performances at frequencies in the range of few gigahertz (Eggert et al. 1997; Agarwal et al. 1992). In this work, we investigate unity-gain frequencies (f/sub T/) and maximum oscillation frequencies (f/sub max/) of 0.4 /spl mu/m gate length p- and n-type SOI MOSFETs elaborated on a p-type high resistivity SIMOX substrate. Coplanar transmission lines patterned on the same type of SIMOX substrate are also characterized in term of propagation loss variation versus frequencies. Satisfactory results, in comparison with a reference sample realized on a bulk silicon wafer, for both active and passive devices are reported.