Title :
Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon
Author :
Hossain, N. ; Jin, S.R. ; Sweeney, S.J. ; Liebich, S. ; Ludewig, P. ; Zimprich, M. ; Volz, K. ; Kunert, B. ; Stolz, W.
Author_Institution :
Dept. of Phys., Univ. of Surrey, Guildford, UK
Abstract :
This paper reports the lattice matched monolithic integration of novel direct band-gap dilute nitride Ga(NAsP) QW lasers on an (001) silicon substrate using novel (BGa)P strain compensating layer. Lasing operation up to 165K is verified with a threshold current density of 1.6kAcm-2 and a characteristic temperature of 73K for a SQW device, which is a positive step towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.
Keywords :
boron compounds; elemental semiconductors; gallium compounds; nitrogen compounds; quantum well lasers; silicon; substrates; Ga(NAsP)-(BGa)P; Si; laser diodes; lattice matched monolithic integration; monolithically integrated QW lasers; physical properties; silicon substrate; strain compensating layer; temperature 73 K; Current measurement; Lattices; Photonic band gap; Semiconductor lasers; Silicon; Temperature measurement;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053745
