DocumentCode
1957653
Title
UV absorption and photoluminescence of nanometer-sized ZnS prepared by different routes
Author
Li, LIU ; Liu Yinfeng ; Wang Liping ; Gu Beilei ; Mao Haiyan ; Hu Hefeng ; Liu Li ; Gu Ying ; Yiben, X.
Author_Institution
Dept. of Polymer Mater., Shanghai Univ., Shanghai
fYear
2009
fDate
5-8 Jan. 2009
Firstpage
458
Lastpage
462
Abstract
Nanosized ZnS passivated by chitosan was successfully synthesized by coordination transformation method through solution route (chitosan-Zn2+ complex solution co-precipitated with Na2S solution) and film route (chitosan-Zn2+ complex film immersed in Na2S solution). UV absorption of nanosized ZnS showed a clear blue-shift of the onset wavelength for both kinds of the samples while the shift amount through film route is bigger than that through solution route. Dimension and the energy gap of samples by either route depended slightly on the ratio of nitrogen atoms within the chitosan to Zn ions over the experimental range. Excitation-emission spectrum manifested that the emission spectra of nanosized ZnS samples prepared by both routes have shown broad emission bands, while the emission peaks of the samples by solution route are more complicated than those by film route. The emission mechanisms concerning to the peaks found in the samples by solution route were suggested to excitons energy level, trap-hole energy level generated by S vacancy and Cl-impurity energy level, respectively. However, for the samples of nanosized ZnS prepared by film route, only single but broad and strong emission peak at 406nm was observed, corresponding to S vacancy energy level.
Keywords
II-VI semiconductors; excitons; hole traps; impurity states; nanostructured materials; nanotechnology; photoluminescence; semiconductor growth; spectral line shift; ultraviolet spectra; vacancies (crystal); zinc compounds; UV absorption; ZnS; blue shift; chitosan; coordination transformation method; excitation-emission spectrum; excitons energy level; film route; impurity energy level; nanometer-sized ZnS; nitrogen atoms; passivation; photoluminescence; trap-hole energy level; vacancy; Chemicals; Computer displays; Electromagnetic wave absorption; Energy states; Nanoparticles; Optical films; Photoluminescence; Polymer films; Quantum computing; Zinc compounds; Chitosan; Nanometer-sized ZnS; UV absorption; coordination transformation method; photoluminescence spectrum;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4244-4629-2
Electronic_ISBN
978-1-4244-4630-8
Type
conf
DOI
10.1109/NEMS.2009.5068618
Filename
5068618
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