Title :
A room temperature electrically pumped 1.3-µm InAs quantum dot laser monolithically grown on silicon substrates
Author :
Lee, A.D. ; Wang, T. ; Pozzi, F. ; Seeds, A.J. ; Liu, H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Abstract :
We present a room-temperature 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302μm. The laser was operated in pulsed mode. The growth was enabled via the optimisation of the temperature of the initial nucleation layer of GaAs.
Keywords :
III-V semiconductors; indium compounds; integrated optics; laser modes; nucleation; optical pumping; quantum dot lasers; semiconductor growth; InAs; Si; emission wavelength; monolithic growth; nucleation layer; pulsed mode; room temperature electrically pumped quantum dot laser; silicon substrates; temperature 20 degC; temperature 293 K to 298 K; temperature optimisation; threshold current; wavelength 1.302 mum; Gallium arsenide; Laser modes; Photonics; Quantum dot lasers; Silicon; Substrates;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053757
