Title :
A novel p+ Poly-SiGe Gate CMOS device
Author :
Zhang, Jing ; Tan, Kaizhou ; Xu, Siliu ; Zhang, Zhengfan ; Liu, Yukui ; Chen, Guangbing ; Li, Kaicheng ; Zhang, Heming ; Hu, Huiyong
Author_Institution :
Nat. Lab. of Analog Integrated Circuits, Chongqing
Abstract :
In order to improve the matching performance of the nMOSFET and pMOSFET threshold voltages in CMOS circuit, a novel p+ poly-SiGe gate CMOS device is described in this paper. With the change in work function and bandgap, the device effectively reduces the threshold voltage Vth of pMOSFET while the performance of nMOSFET is maintained. Moreover, the threshold voltage Vth of pMOSFET can be continuously adjusted with the change in Ge composition. Thus the performance of pMOSFET is made closer to that of nMOSFET, which is of great importance to further improving the performance of CMOS circuit.
Keywords :
Ge-Si alloys; MOSFET; energy gap; work function; SiGe; bandgap; matching performance; nMOSFET; p+ poly-silicon-germanium gate CMOS device; pMOSFET; work function; CMOS process; CMOS technology; Composite materials; Inorganic materials; MOS devices; MOSFET circuits; Photonic band gap; Systems engineering and theory; Temperature; Threshold voltage; CMOS; Gate; Poly-SiGe; threshold voltage;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068623
