A novel p+ Poly-SiGe Gate CMOS device

Author

Zhang, Jing ; Tan, Kaizhou ; Xu, Siliu ; Zhang, Zhengfan ; Liu, Yukui ; Chen, Guangbing ; Li, Kaicheng ; Zhang, Heming ; Hu, Huiyong

Author_Institution

Nat. Lab. of Analog Integrated Circuits, Chongqing

fYear

2009

fDate

5-8 Jan. 2009

Firstpage

480

Lastpage

484

Abstract

In order to improve the matching performance of the nMOSFET and pMOSFET threshold voltages in CMOS circuit, a novel p+ poly-SiGe gate CMOS device is described in this paper. With the change in work function and bandgap, the device effectively reduces the threshold voltage Vth of pMOSFET while the performance of nMOSFET is maintained. Moreover, the threshold voltage Vth of pMOSFET can be continuously adjusted with the change in Ge composition. Thus the performance of pMOSFET is made closer to that of nMOSFET, which is of great importance to further improving the performance of CMOS circuit.

Keywords

Ge-Si alloys; MOSFET; energy gap; work function; SiGe; bandgap; matching performance; nMOSFET; p+ poly-silicon-germanium gate CMOS device; pMOSFET; work function; CMOS process; CMOS technology; Composite materials; Inorganic materials; MOS devices; MOSFET circuits; Photonic band gap; Systems engineering and theory; Temperature; Threshold voltage; CMOS; Gate; Poly-SiGe; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4244-4629-2

Electronic_ISBN

978-1-4244-4630-8

Type

conf

DOI

10.1109/NEMS.2009.5068623

Filename

5068623