Title :
Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain
Author :
Cao, D.S. ; Tandaechanurat, A. ; Nakayama, S. ; Hauke, N. ; Zabel, T. ; Ishida, S. ; Iwamoto, S. ; Finley, J.J. ; Abstreiter, G. ; Arakawa, Y.
Author_Institution :
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
Abstract :
We fabricated a silicon-based three-dimensional photonic crystal nanocavity by micromanipulation technique, exhibiting a high quality factor of ~14,500. Lasing oscillation with an InAs/GaAs quantum-dot layer inserted in the cavity was successfully demonstrated at 11K.
Keywords :
Q-factor; microcavity lasers; nanophotonics; optical fabrication; photonic crystals; quantum dot lasers; silicon; InAs-GaAs; lasing oscillation; micromanipulation technique; quality factor; quantum-dot layer; silicon-based 3D photonic crystal nanocavity; temperature 11 K; Cavity resonators; Gallium arsenide; Oscillators; Photonics; Q factor; Silicon; Three dimensional displays;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053758
