Title :
Yield prediction and enhancement of monolithic amplifiers
Author :
Hwang, Y. ; Ip, K. ; Yocom, P. ; Clark, M. ; Ngan, Y.C. ; Esfandiari, R. ; Mlinar, M.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
Important device and matching circuit parameters that affect the RF performance of monolithic amplifiers are identified using a circuit simulator, and the critical process parameters that affect the MESFET device parameters are identified using a process simulator. Monte Carlo analysis is used to predict the RF yield of monolithic amplifiers. The calculated results are compared to the measured data and show good agreement. Several circuit design techniques to enhance the chip yield are described.<>
Keywords :
MMIC; Monte Carlo methods; Schottky gate field effect transistors; digital simulation; microwave amplifiers; MESFET; Monte Carlo analysis; RF performance; RF yield; chip yield; circuit simulator; critical process parameters; matching circuit parameters; monolithic amplifiers; process simulator; Integrated circuit yield; MESFET circuits; Microwave circuits; Millimeter wave technology; Optical amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency identification; Resistors; Space technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69346
