Title :
A low-noise CMOS interface circuit for closed-loop accelerometer
Author :
Yin, Liang ; Liu, Xiaowei ; Chen, Wei ; Chen, Weiping ; Zhou, Zhiping
Author_Institution :
Dept. of Microelectron., Harbin Inst. of Technol., Harbin
Abstract :
In this paper, design and characterization of a 18 V switched-capacitor CMOS interface circuit for the closed-loop operation of a capacitive accelerometer is presented. The pendulous silicon accelerometer operates in atmosphere pressure and is designed for non-peaking (low-Q) response with a sensitivity of 0.5 pF/g without vacuum packaging. Test results shows that a full scale acceleration of plusmn15 g and a signal bandwidth of 300 Hz is achieved. The complete module operates from a single 18 V supply and has a measured sensitivity of 420 mV/g with a noise of floor of 10 mug/radic(Hz) in closed-loop. The chip is fabricated in the 2 mum two-metal and two-poly n-well CMOS process with an area of 15.2 mm2.
Keywords :
CMOS integrated circuits; accelerometers; capacitor switching; closed loop systems; integrated circuit design; integrated circuit modelling; integrated circuit noise; bandwidth 300 Hz; chip fabrication; closed-loop accelerometer; low-noise CMOS interface circuit; pendulous silicon accelerometer; size 2 mum; switched-capacitor CMOS design; two-poly n-well CMOS process; voltage 18 V; Accelerometers; Atmosphere; Bandwidth; Circuit testing; Life estimation; Noise measurement; Packaging; Semiconductor device measurement; Silicon; Switching circuits; Closed-loop accelerometer; Inertial sensors; Interface circuit; Switched capacitor;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068628
