Title :
Uniform ZnO Thin-Film Transistors by an Ambient Process
Author :
Nelson, Shelby F. ; Levy, David ; Freeman, Diane ; Cowdery-Corvan, Peter ; Tutt, Lee ; Burberry, Mitchell ; Irving, Lyn
Author_Institution :
Eastman Kodak Co., Rochester
Abstract :
We have fabricated zinc oxide thin-film transistors using a novel ambient deposition process, with maximum temperature of 200degC. The TFTs deposited this way show sufficiently good properties to make them potentially applicable to OLED display backplanes.
Keywords :
II-VI semiconductors; LED displays; carrier mobility; coating techniques; optical backplanes; organic light emitting diodes; stability; thin film transistors; wide band gap semiconductors; zinc compounds; OLED display backplanes; ZnO; ambient deposition process; bias stability values; mobility values; temperature 200 C; threshold uniformity values; zinc oxide thin-film transistor fabrication; Backplanes; Dielectric substrates; Flat panel displays; Liquid crystal displays; Organic light emitting diodes; Stress; Testing; Thin film transistors; Threshold voltage; Zinc oxide;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373628
