Fast ZnO Thin-Film Transistor Circuits

Author

Sun, Jie ; Mourey, Devin ; Zhao, Dalong ; Park, Sungkyu ; Nelson, Shelby F. ; Levy, David H. ; Freeman, Diane ; Cowdery-Corvan, Peter ; Tutt, Lee ; Jackson, Thomas N.

Author_Institution

Penn State Univ., University Park

fYear

2007

fDate

18-20 June 2007

Firstpage

19

Lastpage

20

Abstract

We report here five-stage ring-oscillator-integrated circuits fabricated using ZnO TFTs with signal propagation delays as low as 100 ns (>1 MHz oscillation frequency) for a 45 V supply voltage. These circuits also operate at a supply voltage as low as 10 V. To our knowledge, these are the fastest ZnO integrated circuits reported to date. We also designed ring oscillators with different source/gate and drain/gate overlap to investigate aspects of the circuit speed.

Keywords

II-VI semiconductors; high-speed integrated circuits; integrated circuit design; oscillators; thin film transistors; wide band gap semiconductors; zinc compounds; TFT; ZnO; circuit speed; fast thin-film transistor circuits; five-stage ring-oscillator-integrated circuits; integrated circuit fabrication; signal propagation delays; voltage 45 V; Amorphous materials; Chromium; Circuits; Frequency; Ring oscillators; Thin film transistors; Threshold voltage; Voltage-controlled oscillators; Wet etching; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373631

Filename

4373631