DocumentCode :
1957933
Title :
Fast ZnO Thin-Film Transistor Circuits
Author :
Sun, Jie ; Mourey, Devin ; Zhao, Dalong ; Park, Sungkyu ; Nelson, Shelby F. ; Levy, David H. ; Freeman, Diane ; Cowdery-Corvan, Peter ; Tutt, Lee ; Jackson, Thomas N.
Author_Institution :
Penn State Univ., University Park
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
19
Lastpage :
20
Abstract :
We report here five-stage ring-oscillator-integrated circuits fabricated using ZnO TFTs with signal propagation delays as low as 100 ns (>1 MHz oscillation frequency) for a 45 V supply voltage. These circuits also operate at a supply voltage as low as 10 V. To our knowledge, these are the fastest ZnO integrated circuits reported to date. We also designed ring oscillators with different source/gate and drain/gate overlap to investigate aspects of the circuit speed.
Keywords :
II-VI semiconductors; high-speed integrated circuits; integrated circuit design; oscillators; thin film transistors; wide band gap semiconductors; zinc compounds; TFT; ZnO; circuit speed; fast thin-film transistor circuits; five-stage ring-oscillator-integrated circuits; integrated circuit fabrication; signal propagation delays; voltage 45 V; Amorphous materials; Chromium; Circuits; Frequency; Ring oscillators; Thin film transistors; Threshold voltage; Voltage-controlled oscillators; Wet etching; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373631
Filename :
4373631
Link To Document :
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