DocumentCode
1957944
Title
Placement driven retiming with a coupled edge timing model
Author
Neumann, I. ; Kunz, W.
Author_Institution
Dept. of Comput. Sci., Frankfurt Univ., Germany
fYear
2001
fDate
4-8 Nov. 2001
Firstpage
95
Lastpage
102
Abstract
Retiming is a widely investigated technique for performance optimization. It performs powerful modifications on a circuit netlist. However, often it is not clear whether the predicted performance improvement will still be valid after placement has been performed. This paper presents a new retiming algorithm using a highly accurate timing model taking into account the effect of retiming on capacitive loads of single wires as well as fanout systems. We propose the integration of retiming into a timing-driven standard cell placement environment based on simulated annealing. Retiming is used as an optimization technique throughout the whole placement process. The experimental results show the benefit of the proposed approach. In comparison with the conventional design flow based on standard FEAS (Leiserson and Saxe, J. VLSI and Computer Sys., pp. 41-67, 1983; and Algorithmica vol. 6, no 1, pp. 5-35, 1991.), our approach achieved an improvement in cycle time of up to 34% and 17% on the average.
Keywords
circuit layout; circuit optimisation; logic design; sequential circuits; simulated annealing; timing; FEAS algorithin; capacitive loads; circuit netlist modifications; coupled edge timing model; cycle time; fanout systems; optimization technique; performance improvement; performance optimization; placement driven retiming; placement process; retiming; retiming algorithm; retiming integration; sequential circuits; simulated annealing; timing model; timing-driven standard cell placement environment; CMOS technology; Circuit testing; Coupling circuits; Delay; Logic testing; Optimization; Registers; Semiconductor device modeling; Timing; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Aided Design, 2001. ICCAD 2001. IEEE/ACM International Conference on
Conference_Location
San Jose, CA, USA
ISSN
1092-3152
Print_ISBN
0-7803-7247-6
Type
conf
DOI
10.1109/ICCAD.2001.968604
Filename
968604
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