Title :
Electrical and chemical stability of polymer transistors
Author :
Street, R.A. ; Chabinyc, M.
Author_Institution :
Palo Alto Res. Center, Palo Alto
Abstract :
We describe the effects of both electrical stress and environmental exposure on polythiophene TFTs.The physical mechanisms of the bias stress effects, and whether they are intrinsic to the polymer semiconductor, will be discussed. We propose that molecular impurities cause an increase the local disorder and provide localized states that modify the electrical transport.
Keywords :
environmental factors; localised states; organic semiconductors; stability; stress effects; thin film transistors; transport processes; bias stress effects; chemical stability; electrical stability; electrical stress; electrical transport; environmental exposure; localized states; molecular impurities; physical mechanisms; polymer semiconductor; polymer transistors; polythiophene TFT; Backplanes; Chemicals; Displays; Polymer films; Solvents; Stability; Stress measurement; Thermal stresses; Thin film transistors; Threshold voltage;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373632
