Title :
Controlling strain in Ge on Si for EA modulators
Author :
Kuroyanagi, Ryo ; Ishikawa, Yasuhiko ; Tsuchizawa, Tai ; Itabashi, Seiichi ; Wada, Kazumi
Author_Institution :
Dept. of Marerials Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
The concept of how to control operation wavelength of Ge electroabsorption modulators with external stress is shown. Enough stress to shift absorption edge of Ge is applied to Ge on Si in our experiments.
Keywords :
electro-optical modulation; electroabsorption; elemental semiconductors; germanium; silicon; strain control; EA modulator; Ge-Si; electroabsorption modulator; operation wavelength; strain control; Absorption; Modulation; Silicon; Silicon compounds; Strain; Stress; Stress measurement;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053766
