Abstract :
Provided with both high blocking voltage and high current handling capability, GaN-based device has been expected to be a viable alternative to GaAs, Silicon, and even to SiC ones in power electronics (Ueda et al., 2005). However, there still remains technological tasks to overcome in order to put them into practical use. Those are summarized as following three points; i.e., "Normally-off\´, "Collapse-free", and "Heat-release". In this paper, those points will be addressed by introducing new transistor named GIT (gate injection transistor) (Uemoto et al., 2006) with relevant technologies.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; microwave power transistors; silicon compounds; wide band gap semiconductors; GaAs; GaN; SiC; gate injection transistor; microwave switching; power devices; power electronics; Aluminum gallium nitride; Charge carrier processes; Electromagnetic heating; FETs; Gallium nitride; MESFETs; Microwave devices; Passivation; Silicon; Temperature;
