DocumentCode :
1958000
Title :
Direct gap photoluminescence and electroluminescence in Ge1−ySny alloys
Author :
Roucka, Radek ; Mathews, J. ; Menendez, Jose ; Kouvetakis, J.
Author_Institution :
Dept. of Chem., Arizona State Univ., Tempe, AZ, USA
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
214
Lastpage :
216
Abstract :
Direct-gap photoluminescence and electroluminescence has been observed in Ge1-ySny alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.
Keywords :
electroluminescence; energy gap; germanium alloys; metallic thin films; photoluminescence; tin alloys; Γ-L separation; Ge1-ySny; direct band gap photoluminescence; electroluminescence; thin films; Doping; Electroluminescence; Photoluminescence; Silicon; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053767
Filename :
6053767
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1958000
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