Title :
AlGaN/GaN HEMTs on Diamond Substrate
Author :
Dumka, Deep C. ; Saunier, Paul
Author_Institution :
TriQuint Semicond. Inc., Richardson
Abstract :
In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposition (CVD). It is concluded that these are the best-reported results for a transistor using GaN on diamond material.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; diamond; gallium compounds; high electron mobility transistors; semiconductor epitaxial layers; silicon; AlGaN-GaN; C; CVD; HEMT; Si; chemical vapor deposition; epitaxial layers; high electron mobility transistor; high resistivity Si (111) substrate; polycrystalline diamond substrate; Aluminum gallium nitride; Chemical vapor deposition; Gallium nitride; HEMTs; MODFETs; Power transistors; Silicon carbide; Substrates; Thermal conductivity; Thermal management;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373637
