Title :
10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge
Author :
Moon, J.S. ; Hashimoto, P. ; Wong, D. ; Hu, M. ; Antcliffe, M. ; McGuire, C. ; Micovic, M. ; Willadsen, P. ; Chow, D.
Author_Institution :
HRL Lab. LLC, Malibu
Abstract :
The paper reports small-signal and large-signal performance of 140 nm gatelength field-plated AlGaN/GaN HEMTs at Ka-band frequencies, in which the AlGaN/GaN HEMTs were fabricated with n+ GaN source ledge to reduce source access resistance such that the gate-to-drain feedback capacitance and breakdown voltage is not impacted.
Keywords :
II-VI semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; AlGaN-GaN; HEMT; Ka-band frequency; breakdown voltage; feedback capacitance; gatelength field-plated; high PAE field-plate; large-signal performance; n+GaN source ledge; small-signal performance; Aluminum gallium nitride; Density measurement; Feedback; Frequency; Gallium nitride; HEMTs; MODFETs; Moon; Parasitic capacitance; Power measurement;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373638
