Control of the size and spatial location of voids in silicon by helium and hydrogen implantation

Summary form only given. There has been recent interest in the study of implanted helium and/or hydrogen induced voids in silicon. Much of this interest has stemmed from the ion-cutting techniques originally developed by Bruel (Electron. Lett. vol. 31, p. 1201, 1995). Although most of the literature on this topic has centered on the ion-cutting aspects, a few studies have concentrated on topics such as internal surface science, electronic properties, and quantum/photonic effects. Very little work has been done on controlling the size, density, and placement of these voids. In this work, we investigate the effects of annealing, co-implants, and patterned implants to study the effects on size and placement of stable voids in silicon. For the first time, we show here that void regions can be placed in precise (<0.5 /spl mu/m) locations and that void size is controllable with the appropriate annealing and implant schedules. This work provides a better understanding of the void-dislocation interactions involved and the processes of void nucleation and growth.