Title :
AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts
Author :
Recht, F. ; McCarthy, L. ; Shen, L. ; Poblenz, C. ; Corrion, A. ; Speck, J.S. ; Mishra, U.K.
Author_Institution :
California Univ., Santa Barbara
Abstract :
In this work we report AIGaN/GaN HEMTs with nonalloyed ohmic contacts by large angle ion implantation with a contact resistance to the channel of 0.2 Omegamm.
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; ion implantation; ohmic contacts; semiconductor doping; wide band gap semiconductors; AlGaN-GaN; HEMT; contact resistance; large angle ion implantation; nonalloyed ohmic contacts; Aluminum gallium nitride; Contact resistance; Electrons; Gallium nitride; HEMTs; Ion implantation; Leakage current; MODFETs; Ohmic contacts; Radar;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373640
