Title :
Self-Aligned AlGaN/GaN High Electron Mobility Transistors
Author :
Kumar, V. ; Kim, D.-H. ; Basu, A. ; Adesida, C.
Author_Institution :
Univ. of Illinois at Urbana-Champaign, Urbana
Abstract :
In this paper, we present high performance 0.25mum gate-length self-aligned AIGaN/GaN HEMTs on 6H-SiC substrates using a single ohmic step. Our recently developed Mo/Al/Mo/Au-based ohmic contact requiring annealing temperatures between annealing temperatures 500 and 600degC was utilized. Ohmic contact resistances between 0.3 - 0.5 ohm-mm have been achieved.
Keywords :
III-V semiconductors; aluminium compounds; annealing; contact resistance; gallium compounds; high electron mobility transistors; ohmic contacts; silicon compounds; wide band gap semiconductors; AlGaN-GaN; H-SiC; HEMT; annealing; ohmic contact resistances; self-aligned high electron mobility transistors; single ohmic step; size 0.25 mum; temperature 500 C to 600 C; Aluminum gallium nitride; Annealing; Fabrication; Frequency; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Plasma temperature; Silicon;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373641
