DocumentCode :
1958086
Title :
High n++ doped germanium: Dopant in-diffusion and modeling
Author :
Cai, Yan ; Camacho-Aguilera, Rodolfo ; Bessette, Jonathan T. ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution :
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
228
Lastpage :
230
Abstract :
We present an active carrier concentration of 3 × 1019 cm-3 in epitaxial Ge-on-Si for light emitting devices by dopant enhanced in-diffusion of phosphorus from a high-level dopant reservoir.
Keywords :
germanium; light emitting devices; phosphorus; silicon; Ge; P; Si; dopant in-diffusion; dopant modeling; high-level dopant reservoir; light emitting devices; Annealing; Doping; Films; Germanium; Semiconductor process modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053772
Filename :
6053772
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1958086
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