DocumentCode
1958088
Title
A GHz range, single structure, multi-mode ZnO solidly-mounted bulk acoustic resonator
Author
Munir, Farasat ; Wathen, Adam ; Hunt, William
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
853
Lastpage
856
Abstract
Multiple modes excited in a single solidly mounted ZnO bulk acoustic resonator would provide a multi band resonator operating at non-harmonically-related frequencies in the GHz range. Ordinarily, separate devices with different electrode and reflector designs are needed to excite the thickness shear (TSM) and thickness-extensional (TE) bulk acoustic modes, each device optimized for a single mode. In this work, we present a solidly mounted, c-axis oriented, ZnO bulk acoustic resonator with a single electrode geometry that excites both TSM and TE modes within the same structure. The acoustic reflector stack is specifically designed to efficiently reflect both modes. In addition, the resonator footprint is only 400μm × 400μm making it ideal for on-chip integration. Successful fabrication and testing of approximately 50 multi-mode devices was demonstrated. The resonant frequencies are located at 1.2GHz and 2.3GHz for the TSM and TE modes, respectively. The quality factors of the devices are between 400-500 and 800 1000, respectively. In addition, a hybrid mode was observed, non-harmonically-related to the TSM and TE, with a resonant frequency of about 1.5GHz and a Q of 700. It is also shown that the resonant frequency of each mode changes accordingly with mass-loading on the center electrode, indicative of mode trapping under the electrode.
Keywords
acoustic resonators; acoustic wave reflection; bulk acoustic wave devices; zinc compounds; TE bulk acoustic modes; TSM; ZnO; frequency 1.2 GHz; frequency 2.3 GHz; mass-loading; multimode solidly-mounted bulk acoustic resonator; on-chip integration; quality factors; single electrode geometry; single structure; thickness shear; thickness-extensional bulk acoustic modes; Acoustics; Electrodes; Frequency measurement; Impedance; Materials; Resonant frequency; Zinc oxide; BAW; Multi-Mode; SMR; ZnO;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location
San Diego, CA
ISSN
1948-5719
Print_ISBN
978-1-4577-0382-9
Type
conf
DOI
10.1109/ULTSYM.2010.5935739
Filename
5935739
Link To Document