• DocumentCode
    1958088
  • Title

    A GHz range, single structure, multi-mode ZnO solidly-mounted bulk acoustic resonator

  • Author

    Munir, Farasat ; Wathen, Adam ; Hunt, William

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2010
  • fDate
    11-14 Oct. 2010
  • Firstpage
    853
  • Lastpage
    856
  • Abstract
    Multiple modes excited in a single solidly mounted ZnO bulk acoustic resonator would provide a multi band resonator operating at non-harmonically-related frequencies in the GHz range. Ordinarily, separate devices with different electrode and reflector designs are needed to excite the thickness shear (TSM) and thickness-extensional (TE) bulk acoustic modes, each device optimized for a single mode. In this work, we present a solidly mounted, c-axis oriented, ZnO bulk acoustic resonator with a single electrode geometry that excites both TSM and TE modes within the same structure. The acoustic reflector stack is specifically designed to efficiently reflect both modes. In addition, the resonator footprint is only 400μm × 400μm making it ideal for on-chip integration. Successful fabrication and testing of approximately 50 multi-mode devices was demonstrated. The resonant frequencies are located at 1.2GHz and 2.3GHz for the TSM and TE modes, respectively. The quality factors of the devices are between 400-500 and 800 1000, respectively. In addition, a hybrid mode was observed, non-harmonically-related to the TSM and TE, with a resonant frequency of about 1.5GHz and a Q of 700. It is also shown that the resonant frequency of each mode changes accordingly with mass-loading on the center electrode, indicative of mode trapping under the electrode.
  • Keywords
    acoustic resonators; acoustic wave reflection; bulk acoustic wave devices; zinc compounds; TE bulk acoustic modes; TSM; ZnO; frequency 1.2 GHz; frequency 2.3 GHz; mass-loading; multimode solidly-mounted bulk acoustic resonator; on-chip integration; quality factors; single electrode geometry; single structure; thickness shear; thickness-extensional bulk acoustic modes; Acoustics; Electrodes; Frequency measurement; Impedance; Materials; Resonant frequency; Zinc oxide; BAW; Multi-Mode; SMR; ZnO;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2010 IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    1948-5719
  • Print_ISBN
    978-1-4577-0382-9
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2010.5935739
  • Filename
    5935739