DocumentCode
1958093
Title
Analysis of lateral surface leakage in the vicinity of Schottky gates in AlGaN/GaN HEMTs
Author
Kotani, Junji ; Tajima, Masafumi ; Hashizume, Tamotsu
Author_Institution
Hokkaido Univ., Sapporo
fYear
2007
fDate
18-20 June 2007
Firstpage
41
Lastpage
42
Abstract
In this paper, we systematically characterize surface leakage current in the vicinity of Schottky gates on the AIGaN/GaN heterostructure, separating it from the normal leakage current through the Schottky interface.
Keywords
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; carrier mobility; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device models; surface states; AlGaN-GaN; HEMT; Schottky gates; Schottky interface; lateral surface leakage current analysis; leakage current transport model; normal leakage current; Aluminum gallium nitride; Current measurement; Electrons; Gallium nitride; HEMTs; Leakage current; MODFETs; Passivation; Temperature dependence; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373642
Filename
4373642
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