Title :
Analysis of lateral surface leakage in the vicinity of Schottky gates in AlGaN/GaN HEMTs
Author :
Kotani, Junji ; Tajima, Masafumi ; Hashizume, Tamotsu
Author_Institution :
Hokkaido Univ., Sapporo
Abstract :
In this paper, we systematically characterize surface leakage current in the vicinity of Schottky gates on the AIGaN/GaN heterostructure, separating it from the normal leakage current through the Schottky interface.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; carrier mobility; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device models; surface states; AlGaN-GaN; HEMT; Schottky gates; Schottky interface; lateral surface leakage current analysis; leakage current transport model; normal leakage current; Aluminum gallium nitride; Current measurement; Electrons; Gallium nitride; HEMTs; Leakage current; MODFETs; Passivation; Temperature dependence; Tunneling;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373642
