Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-based HEMTs

This paper reports a novel approach in designing high frequency AlGaN/GaN HEMTs based on gate-drain field engineering utilizing a drain-connected field controlling electrode. The absence of frequency behavior degradation with drain bias as well as record high electron velocity values were obtained using gate-to-FCE separation of 0.5-0.7 mum. Thus, we demonstrated that the FCE is a powerful way to improving the high frequency, high power performance of GaN HEMTs at high drain biases.