Author :
Nayfeh, H.M. ; Jeng, S. ; Narasimha, S. ; Butt, S. ; Pal, R. ; Waite, A. ; Tabakman, K. ; Johnson, J.B. ; Liu, J. ; Holt, J. ; Adam, T. ; Madan, A. ; Domenicucci, A.
Abstract :
In this paper, we quantify the relation of low lateral electric field hole mobility and channel strain to the virtual source velocity of nanoscale p-type SOI MOSFET devices with effective channel length from 35 to 50 nm and show strong correlation. The mobility is modified by the application of uniaxial compressive strain in the I GPa regime to the channel by employing two stressors-(1) embedded SiGe (eSiGe) at the source/drain areas and (2) compressive strain silicon nitride contact liner film. The corresponding changes in low-field mobility and saturation drain current are significant.
Keywords :
Ge-Si alloys; MOSFET; nanoelectronics; semiconductor materials; silicon-on-insulator; SiGe; channel strain; hole transport; low lateral electric field hole mobility; nanoscale p-type MOSFET SOI devices; saturation drain current; uniaxial compressive strain; virtual source velocity; Capacitive sensors; MOSFET circuits; Nanoscale devices;
